february 2014 ?2013 fairchild semiconductor corporation FDMA908PZ rev.e2 www.fairchildsemi.com 1 FDMA908PZ single p-channel powertrench ? mosfet FDMA908PZ single p-channel powertrench ? mosfet -12 v, -12 a, 12.5 m features ? max r ds(on) = 12.5 m at v gs = -4.5 v, i d = -12 a ? max r ds(on) = 18 m at v gs = -2.5 v, i d = -10 a ? max r ds(on) = 28 m at v gs = -1.8 v, i d = -8 a ? low profile - 0.8 mm maximum in the new package microfet 2x2 mm ? hbm esd protection level > 2.8 kv typical (note 3) ? free from halogenated compounds and antimony oxides ? rohs compliant general description this device is designed specifically for batte ry charge or load switching in cellular handset and other ultraportable applications. it features a mosfet with low on-state resistance and zener diode protection against esd. t he microfet 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. d d s g d d pin 1 drain source microfet 2x2 (bottom view) bottom drain contact d d d d s g mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage -12 v v gs gate to source voltage 8 v i d drain curre -continuous t a = 25 c (note 1a) -12 a -pulsed -40 p d power dissipation t a = 25 c (note 1a) 2.4 w power dissipation t a = 25 c (note 1b) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c r ja thermal resistance, junction to ambient (note 1a) 52 c/w r ja thermal resistance, junction to ambient (note 1b) 145 device marking device package reel size tape width quantity 908 FDMA908PZ microfet 2x2 7 ? 12 mm 3000 units
FDMA908PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 2 ?2013 fairchild semiconductor corporation FDMA908PZ rev.e2 electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = -250 a, v gs = 0 v -12 v bv dss t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25 c -10 mv/c i dss zero gate voltage drain current v ds = -9.6 v, v gs = 0 v -1 a i gss gate to source leakage current v gs = 8 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = -250 a -0.4 -0.6 -1 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = -250 a, referenced to 25 c 2.8 mv/c r ds(on) static drain to source on resistance v gs = -4.5 v, i d = -12 a 10 12.5 m v gs = -2.5 v, i d = -10 a 13 18 v gs = -1.8 v, i d = -8 a 18 28 v gs = -4.5 v, i d = -12 a, t j = 125 c 13 16 g fs forward transconductance v dd = -5 v, i d = -12 a 63 s c iss input capacitance v ds = -6 v, v gs = 0 v, f = 1 mhz 2638 3957 pf c oss output capacitance 649 974 pf c rss reverse transfer capacitance 602 903 pf t d(on) turn-on delay time v dd = -6 v, i d = -12 a, v gs = -4.5 v, r gen = 6 11 21 ns t r rise time 12 23 ns t d(off) turn-off delay time 131 223 ns t f fall time 71 121 ns q g total gate charge v gs = -4.5 v, v dd = -6 v, i d = -12 a 24 34 nc q gs gate to source charge 3.4 nc q gd gate to drain ?miller? charge 5.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = -2 a (note 2) -0.6 -1.2 v v gs = 0 v, i s = -12 a (note 2) -0.8 -1.2 v t rr reverse recovery time i f = -12 a, di/dt = 100 a/ s 26 42 ns q rr reverse recovery charge 8.5 17 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. the diode connected between the gate and source serves only as protection against esd. no gate overvoltage rating is implied . a. 52 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 145 c/w when mounted on a minimum pad of 2 oz copper. g df ds sf ss g df ds sf ss
FDMA908PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 3 ?2013 fairchild semiconductor corporation FDMA908PZ rev.e2 typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 v gs = -2.5 v v gs = -1.8 v v gs = -3 v pulse duration = 80 p s duty cycle = 0.5% max v gs = -1.5 v v gs = -4.5 v -i d , drain current (a) -v ds , drain to source voltage (v) on-region characteristics figure 2. 0 10203040 0 1 2 3 v gs = -1.8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance -i d , drain current (a) v gs = -2.5 v v gs = -3 v v gs = -1.5 v v gs = -4.5 v n o r m a l i z e d o n - r e s i s t a n c e v s d r a i n c u r r e n t a n d g a t e v o l t a g e f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 i d = -12a v gs = -4.5v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 t j = 125 o c i d = -12 a t j = 25 o c -v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max on-resistance vs gate to source voltage figure 5. transfer characteristics 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 t j = 150 o c v ds = -5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c -i d , drain current (a) -v gs , gate to source voltage (v) figure 6. 0.0 0.4 0.8 1.2 0.001 0.01 0.1 1 10 100 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v -i s , reverse drain current (a) -v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMA908PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 4 ?2013 fairchild semiconductor corporation FDMA908PZ rev.e2 figure 7. 0 5 10 15 20 25 0.0 1.5 3.0 4.5 i d = -12a v dd = -8v v dd = -6v -v gs , gate to source voltage (v) q g , gate charge (nc) v dd = -4v gate charge characteristics figure 8. 0.1 1 10 20 300 1000 5000 f = 1 mhz v gs = 0 v capacitance (pf) -v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0 5 10 15 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 v ds = 0 v t j = 25 o c t j = 125 o c -v gs , gate to source voltage (v) -i g , gate leakage current (a) g a t e l e a k a g e c u r r e n t vs gate to source voltage figure 10. 0.01 0.1 1 10 50 0.01 0.1 1 10 60 curve bent to measured data 10 s 10 ms dc 1 s 100 ms 1 ms -i d , drain current (a) -v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 145 o c/w t a = 25 o c g a t e l e a k a g e c u r r e n t vs gate to source voltage figure 11. single pulse maximum power dissipation typical characteristics t j = 25 c unless otherwise noted 10 -3 10 -2 10 -1 11 0 100 1000 0.1 1 10 100 p (pk) , peak transient power (w) single pulse r t ja = 145 o c/w t a = 25 o c t, pulse width (sec)
FDMA908PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 5 ?2013 fairchild semiconductor corporation FDMA908PZ rev.e2 figure 12. junction-to-ambient transient thermal response curve 10 -3 10 -2 10 -1 11 0 100 1000 0.01 0.1 1 2 single pulse r t ja = 145 o c/w (note 1b) duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
FDMA908PZ single p-channel powertrench ? mosfet www.fairchildsemi.com 6 ?2013 fairchild semiconductor corporation FDMA908PZ rev.e2 dimensional outline and pad layout
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